𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The effect of the growth rate on the low pressure metalorganic vapour phase epitaxy of GaAs/Ge heterostructures

✍ Scribed by G. Timoò; C. Flores; B. Bollani; D. Passoni; C. Bocchi; P. Franzosi; L. Lazzarini; G. Salviati

Book ID
107791958
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
802 KB
Volume
125
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The Growth of GaN Using Plasma Assisted
The Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy
✍ Campion, R.P. ;Li, T. ;Foxon, C.T. ;Harrison, I. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 96 KB 👁 2 views

Conventional metalorganic vapour phase epitaxy (MOVPE) has been very successful in providing high quality GaN films, however, the growth takes place at high temperature and thus requires large flow rates of high purity ammonia. In order to avoid such high and costly use of ammonia, we have developed