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The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots

✍ Scribed by E. S. Moskalenko; M. Larsson; K. F. Karlsson; P. O. Holtz; B. Monemar; W. V. Schoenfeld; P. M. Petroff

Book ID
111445881
Publisher
SP MAIK Nauka/Interperiodica
Year
2007
Tongue
English
Weight
222 KB
Volume
49
Category
Article
ISSN
1063-7834

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Effects of external fields on the excito
Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots
✍ P.O. Holtz; E.S. Moskalenko; M. Larsson; K.F. Karlsson; W.V. Schoenfeld; P.M. Pe πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 127 KB

A low-temperature micro-photoluminescence (m-PL) investigation of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field is reported. It is demonstrated that the QDs PL signal could be increased several times by altering the external and/or the internal electric field. The interna