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The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

✍ Scribed by Grot, S.A.; Gildenblat, G.S.; Hatfield, C.W.; Wronski, C.R.; Badzian, A.R.; Badzian, T.; Messier, R.

Book ID
121186081
Publisher
IEEE
Year
1990
Tongue
English
Weight
308 KB
Volume
11
Category
Article
ISSN
0741-3106

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## Abstract As‐grown (100) homoepitaxial diamond films with boron concentrations [B] from 4.6 Γ— 10^16^ to 1.5 Γ— 10^21^ cm^–3^ have been analysed using X‐ray photoelectron spectroscopy (XPS). Their C 1s core levels contain a dominant component around 284.17 Β± 0.2 eV ascribed to sp^3^ C and a main se