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The effect of boron doping on the lattice parameter of homoepitaxial diamond films

✍ Scribed by Brunet, F.; Germi, P.; Pernet, M.; Deneuville, A.; Gheeraert, E.; Laugier, F.; Burdin, M.; Rolland, G.

Book ID
123512365
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
600 KB
Volume
7
Category
Article
ISSN
0925-9635

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## Abstract As‐grown (100) homoepitaxial diamond films with boron concentrations [B] from 4.6 Γ— 10^16^ to 1.5 Γ— 10^21^ cm^–3^ have been analysed using X‐ray photoelectron spectroscopy (XPS). Their C 1s core levels contain a dominant component around 284.17 Β± 0.2 eV ascribed to sp^3^ C and a main se