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The effect of strain on the base resistance and transit time of ungraded and compositional-graded SiGe HBTs

โœ Scribed by D. Rosenfeld; S.A. Alterovitz

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
567 KB
Volume
37
Category
Article
ISSN
0038-1101

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Effect of Ge content and profile in the
Effect of Ge content and profile in the SiGe base on the performance of a SiGe/Si heterojunction bipolar transistor
โœ Mukul K. Das; N. R. Das; P. K. Basu ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 217 KB

In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well