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The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)

✍ Scribed by M. Gökçen; T. Tunç; Ş. Altındal; İ. Uslu

No coin nor oath required. For personal study only.

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