## Abstract Here, direct correlation between the microstructure of InAs nanowires (NWs) and their electronic transport behavior at room temperature is reported. Pure zinc blende (ZB) InAs NWs grown on SiO~2~/Si substrates are characterized by a rotational twin along their growth‐direction axis whil
✦ LIBER ✦
The effect of pressure on zinc blende and wurtzite structures
✍ Scribed by A.L. Edwards; T.E. Slykhouse; H.G. Drickamer
- Publisher
- Elsevier Science
- Year
- 1959
- Tongue
- English
- Weight
- 671 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0022-3697
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