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The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy

โœ Scribed by Moon, Pilkyung; Lee, J. D.; Ha, S. K.; Lee, E. H.; Choi, W. J.; Song, J. D.; Kim, J. S.; Dang, L. S.


Book ID
118766692
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
290 KB
Volume
6
Category
Article
ISSN
1862-6254

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Effects of growth conditions on the size
โœ X.M. Lu; Y. Izumi; M. Koyama; Y. Nakata; S. Adachi; S. Muto ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 908 KB

The effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs by molecular beam epitaxy (MBE) were studied with an emphasis on their use for single QD spectroscopy. The effects of substrate temperature and growth rate on the density and siz