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Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy

✍ Scribed by Bietti, S.; Cavigli, L.; Minari, S.; Adorno, S.; Isella, G.; Vinattieri, A.; Gurioli, M.; Sanguinetti, S.


Book ID
120497785
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
323 KB
Volume
378
Category
Article
ISSN
0022-0248

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The effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs by molecular beam epitaxy (MBE) were studied with an emphasis on their use for single QD spectroscopy. The effects of substrate temperature and growth rate on the density and siz