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The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors

✍ Scribed by Sunghwan Lee; Hongsik Park; David C. Paine


Book ID
113937490
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
708 KB
Volume
520
Category
Article
ISSN
0040-6090

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