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The effect of ion implantation on polymer mask resistance to ion beam etching

✍ Scribed by TB Borzenko; AF Vyatkin; NN Gonchakova; VI Zinenko; Yu I Koval; VA Kudryashov


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
356 KB
Volume
38
Category
Article
ISSN
0042-207X

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Sohd benzene has been unplanted with mert-gas Ions atth energes rangmg from 16 to 100 keV Ihe small varuuon observed UI the relarwe concentration of the products has been found to depend mamly on The fact that the r&awe acsht of the nuclear and electromc noppmg mechantsms IS changmg along the ener\_