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The effect of illumination with intense light on the conduction current of metal/n-silicon diodes

✍ Scribed by W.I. Hamdi

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
205 KB
Volume
52
Category
Article
ISSN
0042-207X

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We have fabricated porous silicon layers (PSLs) in the anodizing solution, HF(48wt.\%): \(\mathrm{H}_{2} \mathrm{O}=1: 1\). After anodization, the PSL was etched in the same chemical solution as used for anodization and then illuminated with the \(476.5 \mathrm{~nm}\) line, with a power of \(20 \mat