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The effect of growth time and thickness on the electrical properties of ZnSe epilayers on GaAs substrates

โœ Scribed by Y.K. Su; C.C. Chang; C.C. Wei; F.J. Hwang


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
435 KB
Volume
182
Category
Article
ISSN
0040-6090

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๐Ÿ“œ SIMILAR VOLUMES


Growth and electrical properties of epit
โœ Doz. Dr. sc. H. Neumann; Dr. B. Schumann; Dipl.-Phys. D. Peters; Dr. A. Tempel; ๐Ÿ“‚ Article ๐Ÿ“… 1979 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 872 KB

A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87