The Effect of Gold on the Properties of the Si[Single Bond]SiO2 System
β Scribed by Collins, D. R.
- Book ID
- 120576434
- Publisher
- American Institute of Physics
- Year
- 1968
- Tongue
- English
- Weight
- 920 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0021-8979
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)
Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp