𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The effect of electron-hole scattering on transport properties of a 2D semimetal in the HgTe quantum well

✍ Scribed by Entin, M. V.; Magarill, L. I.; Olshanetsky, E. B.; Kvon, Z. D.; Mikhailov, N. N.; Dvoretsky, S. A.

Book ID
121588697
Publisher
Springer
Year
2013
Tongue
English
Weight
372 KB
Volume
117
Category
Article
ISSN
1063-7761

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Electron transport properties of AlGaAs/
Electron transport properties of AlGaAs/GaAs heterostructure containing a d-doping in the quantum well
✍ Rekaya, S. ;BouzaΓ―ene, L. ;Sfaxi, L. ;Hjiri, M. ;Contreras, S. ;Robert, J. L. ;M πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 173 KB

## Abstract Electronic properties of the Si δ‐doped AlGaAs/GaAs heterostructure such as the electron density and electron mobility have been studied when the Al concentration in the vicinity to the silicon (__x__~Al~(Si)) is varied. Shubnikov–de Haas and quantum Hall effect measurements at 4.2 K ha