The effect of atomic-scale etch pit form
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G. Carter; M. J. Nobes; I. V. Katardjiev
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Article
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1990
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John Wiley and Sons
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English
β 396 KB
## Abstract A very simplified model of atomicβscale etch pitting during sputtering erosion for composition depth profiling is used to modify the BenninghovenβHofmann approach to layerβbyβlayer sputtering. It is shown that analytically tractable defining equations result, with solutions that indicat