๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The effect of base resistance of the vertical npn transistor in I2L structures

โœ Scribed by N. Kirschner


Publisher
Elsevier Science
Year
1977
Tongue
English
Weight
417 KB
Volume
20
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Effect of Ge content and profile in the
โœ Mukul K. Das; N. R. Das; P. K. Basu ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 217 KB

In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well

Suppression of the tunneling effect by s
โœ Y Fu; M Willander ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 254 KB

We study the quantum wave transport in nanoscale field-effect transistors. It has been shown that the tunneling effect between the source and the drain in an ultra-short channel transistor significantly degrades the control of the drain current by the gate. However, the tunneling effect is suppresse