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The effect of Al2O3 passivation layer in pulsed-laser-deposited ZrO2 films on n-GaAs substrate as a function of post-annealing temperature

✍ Scribed by Chae, Jimin; Kim, Hyo-Jin; Park, Sang Han; Cho, Sang Wan; Cho, Mann-Ho

No coin nor oath required. For personal study only.

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