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The early voltage of a lateral PNP transistor

✍ Scribed by S.D.S. Malhi; C.A.T. Salama


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
175 KB
Volume
21
Category
Article
ISSN
0038-1101

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The adsorption at the open insulator surface under the air gap of suspended-gate field-effect transistors (SGFETs), which leads to mobile charges, and their r~~bution due to lateral clectrica~ field strengths are two of the reasons for the threshold voltage ins~bility of these gas sensors. A two-dim