The surface morphology and metallic contamination of magnetron sputter-etched Si(111) was investigated by atomic force microscopy (AFM) and high-resolution Rutherford backscattering spectroscopy (RBS) as a function of Ar plasma pressure. The root-mean-square roughness (R rms ) of plasma-etched Si de
โฆ LIBER โฆ
The dynamics of hot F atoms in low pressure plasma etching reactors
โ Scribed by Bernie Shizgal; Andrew S. Clarke
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 844 KB
- Volume
- 166
- Category
- Article
- ISSN
- 0301-0104
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