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The distinction of different kinds of thermally induced defects in silicon

โœ Scribed by Reichel, J.


Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
367 KB
Volume
75
Category
Article
ISSN
0031-8965

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Electron-beam-induced activity of defect
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The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. T