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The Dissociation of Dislocations in Pure and Doped GaAs Crystals

✍ Scribed by Khodos, I. I. ;Sh. Shikhsaidov, M. ;Snighireva, I. I. ;Ushakova, A. P. ;Nikolaichik, V. I.


Book ID
105381374
Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
869 KB
Volume
114
Category
Article
ISSN
0031-8965

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πŸ“œ SIMILAR VOLUMES


The dissociation of dislocations on {112
✍ L.J. Teutonico πŸ“‚ Article πŸ“… 1965 πŸ› Elsevier Science βš– 730 KB

Dissociation on {112} planes in b.c.c. crystals has been considered for dislocations in the ( 110) and (111) orientations. An analysis based on anisotropic elasticity theory has been employed to calculate the force between the partials in each of the possible dissociations. These calculations have