๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The determination of impact ionization coefficients in ln0.2Ga0.8As/GaAs strained-layer superlattice mesa photodiodes

โœ Scribed by G. E. Bulman; T. E. Zipperian; L. R. Dawson


Book ID
112816999
Publisher
Springer US
Year
1986
Tongue
English
Weight
622 KB
Volume
15
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Temperature dependence of the avalanche
โœ A.M. Barnett; J.E. Lees; D.J. Bassford; J.S. Ng; C.H. Tan; R.B. Gomes ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 260 KB

The temperature dependence of the avalanche multiplication process at soft X-ray energies in Al 0.8 Ga 0.2 As avalanche photodiodes (APDs) is investigated at temperatures from + 80 to ร€ 20 1C. The temperature dependence of the pure electron initiated multiplication factor (M e ) and the mixed carrie