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The dependence of Li phase nucleation on the structure of partial dislocations in silicon

✍ Scribed by Vanderwalker, D. M.

Publisher: John Wiley and Sons
Year: 1985
Tongue: English
Weight: 520 KB
Volume: 90
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210900218

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## Abstract Different types of dislocation core are evidenced in silicon depending on the deformation conditions. Perfect (shuffle) dislocations are found for high applied stresses whereas dissociated (glide) dislocations result from the application of moderate or low stresses. This paper is devote