On the nucleation of shuffle dislocations in Si

✍ Scribed by Rabier, J. ;Demenet, J. L.

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 141 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200460543

✦ Synopsis

Abstract

Different types of dislocation core are evidenced in silicon depending on the deformation conditions. Perfect (shuffle) dislocations are found for high applied stresses whereas dissociated (glide) dislocations result from the application of moderate or low stresses. This paper is devoted to the characterization of such a transition and the possible transformation from one type of core to the other type of core. Experimental results suggest that these two types of dislocations are nucleated in two different ranges of temperature and stress rather than resulting from core transformations. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)