β Scribed by AR Nyaiesh; L Holland
No coin nor oath required. For personal study only.
An earlier study of the magnetron sputtering of copper in this laboratory has shown that the growth rate in Ar for a dc magnetron is almost twice that for an rf system with an identical target, operated at the same indicated power input. Experiments have been made to find whether the difference in the deposition efficiency of the two forms of magnetron discharges is an intrinsic characteristic or arises from inaccurate power measurement. A planar system was used with an aluminium target in an Ar discharge operated from dc and rf supplies. The rf system was equipped with a n-matching network and the forward and the reflected power output measured with two instruments.
The rf power supply (R. D. Mathis, SG-1250, 13.56 MHz Crystal Controlled type) had an installed power meter. The Bird ( Thruline wattmeter model 43) instrument was connected in the same output lead for comparative measurements.
To check rf power measurements a non-inductive resistance (5On) was used as a dummy load. The resistor was oil immersed and the temperature rise measured using dc and rf power inputs for a fixed period of time. The Bird instrument in keeping with the makers claim indicated the effective (i.e. the de equivalent) power input. The aluminium deposition rate in Ar at 5 mtorr for the de magnetron, was 0.065 A s-' W-' and for the rf magnetron 0.035 A s-' W-' . These results confirm that the efficiency difference arises from intrinsic characteristics of the system. It is believed that the sustenance of the rf magnetron discharge requires a different power distribution in the sheath and plasma regions to that of the de magnetron.
π SIMILAR VOLUMES
A novel pulsing technique has been proposed to enhance the deposition rate of film in high power pulsed magnetron sputtering (HPPMS). The detailed investigations on the temporal behavior of the plasma density have been done. The results have provided a clue to it: a temporal discrepancy between the
This paper addresses the influences of film thickness on structural and electrical properties of dc magnetron sputter-deposited copper (Cu) films on p-type silicon. Cu films with thicknesses of 130-1050 nm were deposited from Cu target at sputtering power of 125 W in argon ambient gas pressure of 3.
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