Characterization of Intrinsic Defect Lev
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SchΓΆn, J. H. ;Bucher, E.
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Article
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1999
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John Wiley and Sons
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English
β 210 KB
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Electrical and photoluminescence measurements have been carried out on chemical vapor transport grown CuInS 2 single crystals in order to determine intrinsic defect levels in this material. Post-growth treatments, like annealing in vacuum, air, Cu-, In, and S-atmosphere were used to identify the obs