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The Current-Voltage Characteristics of a Photoelectrochemical Cell Using p-Type Porous Si

✍ Scribed by Koshida, Nobuyoshi

Book ID
121651124
Publisher
The Electrochemical Society
Year
1985
Tongue
English
Weight
618 KB
Volume
132
Category
Article
ISSN
0013-4651

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The current-voltage (I-V) characteristics of the Al/NPB/p-Si contact shows rectifying behavior with a potential barrier formed at the contact interface. The barrier height and ideality factor values of 0.65 eV and 1.33 are measured at the forward bias of the diode. The barrier height of the Al/NPB/p