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The current density distribution of the GaAs power MESFET: a theory for device burnout

✍ Scribed by Chang, C.-S.; Day, D.-Y.S.

Book ID
114536555
Publisher
IEEE
Year
1990
Tongue
English
Weight
208 KB
Volume
37
Category
Article
ISSN
0018-9383

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πŸ“œ SIMILAR VOLUMES

A novel extraction method for the higher
A novel extraction method for the higher order components of channel current in a GaAs MESFET
✍ Youngsik Kim; Jaehyok Yi; Youngoo Yang; Bumman Kim πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 111 KB

## Abstract A novel extractionion method has been proposed for direct extract of the higher order Taylor coefficients of the channel current __I~ds~__ (__V~gs~__, __V~ds~__) in a GaAs MESFET. Low‐frequency (45 and 70 MHz) two‐tone signals are employed to measure the harmonic component, and the load