𝔖 Bobbio Scriptorium
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The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier

✍ Scribed by Tian, Xiao-Bo; Xu, Hui; Li, Qing-Jiang


Book ID
125475628
Publisher
IOP Publishing
Year
2013
Tongue
English
Weight
905 KB
Volume
22
Category
Article
ISSN
1674-1056

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## Abstract We have investigated the composition dependence of magnetic tunnel junctions (MTJs) with Nb‐alloyed Al‐oxide (NbAlO~x~) and analyzed the microstructure changes and electrical property of Nb alloyed Al‐oxide layer. After annealing, tunnel magnetoresistance (TMR) ratio of MTJ with Nb‐allo