The effect of phosphorus background conc
β
A. Nylandsted Larsen; P.E. Andersen; P. Gaiduk; K. Kyllesbech Larsen
π
Article
π
1989
π
Elsevier Science
π
English
β 415 KB
lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :Β° cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional