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The characterization of GaAs AND AlGaAs by photoluminescence

โœ Scribed by A.W.R. Leitch; H.L. Ehlers


Book ID
103105880
Publisher
Elsevier Science
Year
1988
Weight
688 KB
Volume
28
Category
Article
ISSN
0020-0891

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Time-resolved photoluminescence characte
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GaAs layers and A1GaAs solar cells grown on Si substrates have been characterized by time-resolved photoluminescence (TRP). The effects of the growth temperature, the strained layer superlattice (SLS), and the thermal cycle annealing (TCA) on the TRP characteristics are discussed. The minority carri