The characteristics of organic–inorganic hybrid low-k thin films by PECVD

✍ Scribed by S.-J. Cho; I.-S. Bae; Y.S. Park; B. Hong; W. Park; S.C. Park; J.-H. Boo

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 594 KB
• Volume: 202
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2008.06.105

✦ Synopsis

Organic-Inorganic hybrid-polymer thin films were deposited on silicon(100) substrates by plasma enhanced chemical vapor deposition (PECVD) method using monomer precursors of the organic-inorganic hybrid polymers. Ethylcyclohexane (ECH) and tetraethoxysilane (TEOS) were utilized as organic and inorganic precursors, and hydrogen and argon were used as a bubbler and carrier gases, respectively. To compare the difference of the electrical and the mechanical properties of the plasma polymerized thin films, we grew the hybrid-polymer thin films under the conditions of various RF (radio frequency using 13.56 MHz) powers in the range of 20-60 W, and then thin films were annealed at 200-500 °C. The as-grown hybrid-polymer thin films were in first analyzed by FT-IR (Fourier Transform-Infrared Spectroscopy), and AFM (Atomic Force Microscopy). The result of FT-IR showed some changing of functional groups such as -CH x , C_C, and Si-O x with changing RF power and annealing temperature. AFM showed that the hybrid-polymer films with smooth surface could be grown uniformly by PECVD. Also, thermal-shrinkage of thickness was measured by cross-sectional SEM. Impedance analyzer was utilized for the measurements of capacitance and I-V curves. From the electrical properties measurements, the lowest dielectric constant and best leakage constant were obtained to be 1.82 and 10 -8 A/cm 2 at 1 MV/cm, respectively.