The change in refractive index of AlGaAs/GaAs single quantum wells due to impurity-induced mixing
โ Scribed by Li, E.H.; Weiss, B.L.
- Book ID
- 119787880
- Publisher
- IEEE
- Year
- 1991
- Tongue
- English
- Weight
- 231 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1041-1135
- DOI
- 10.1109/68.84493
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๐ SIMILAR VOLUMES
The change of the refractive index due to quantum well (QW) disordering is calculated for light propagating normal to the AI0.3Ga0.7As/GaAs QW layers (i.e. along the QW growth direction). A hyperbolic function is used to model the above QW confinement profile after disordering, i.e. thermal interdif
## Abstract The effect of electricโfield strength on the binding energy of a hydrogenic impurity in an InAs/GaAs quantum wire is discussed. Calculations have been performed using Bessel functions as an orthonormal basis within a singleโband effectiveโmass approximation. The electricโfieldโinduced p