Electric-field-induced optical absorption and refractive-index changes of a shallow hydrogenic impurity in an InAs/GaAs quantum wire

✍ Scribed by N. Arunachalam; A. J. Peter; C. K. Yoo

• Book ID: 104542017
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 337 KB
• Volume: 249
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.201147328

✦ Synopsis

Abstract

The effect of electric‐field strength on the binding energy of a hydrogenic impurity in an InAs/GaAs quantum wire is discussed. Calculations have been performed using Bessel functions as an orthonormal basis within a single‐band effective‐mass approximation. The electric‐field‐induced photoionization cross section of the hydrogenic impurity is investigated. The total optical absorption and the refractive‐index changes as a function of normalized photon energy between the ground and the first excited state under the influence of an electric field are analyzed. The optical absorption coefficients and the refractive‐index changes strongly depend on the incident optical intensity and the electric‐field intensity.