The cell structures in the large diameter semi-insulating gallium arsenide single crystal

✍ Scribed by Weizhong Sun; Qiuyan Hao; Haiyun Wang; Caichi Liu; Yuesheng Xu; Yiqing Shi

• Book ID: 103846426
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 284 KB
• Volume: 9
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2006.01.023

✦ Synopsis

Defects constructing net-like cell structures in 4-in semi-insulating gallium arsenide single crystal were studied by the method of chemical etching, X-ray anomalous transmission topography, and transmission electron microscopy. The nature and the formation mechanism of these structures were analyzed. It is assumed that the cell structures are a cluster of small-angle grain boundaries caused by the movement and interaction of high density of dislocations, the cell wall is the typical small-angle grain boundary. The phase difference among the small-angle grain boundaries increases with the density of dislocations.