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The behaviour of Na implanted into Mo thin films during annealing

✍ Scribed by Marika Bodegård; Karin Granath; Lars Stolt; Angus Rockett


Book ID
108472700
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
247 KB
Volume
58
Category
Article
ISSN
0927-0248

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Behaviour of the AlN cap during GaN impl
✍ Gloux, Florence ;Wójtowicz, Tomasz ;Ruterana, Pierre ;Lorenz, K. ;Alves, E. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 345 KB

## Abstract The structural evolution of 10 nm AlN caps grown on GaN layers has been investigated by transmission electron microscopy (TEM) and scanning electron microscopy (SEM) after growth, and implantation by rare earths ions and annealing at high temperature. The AlN cap relaxation is shown to