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The behavior of high energy multiple P+ (0.5–7.5 MeV) and B+ implanted silicon and rapid thermal annealing

✍ Scribed by Wu Yuguang; Zhang Tonghe; Luo Yan; Sun Guiru

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

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✍ Shiryaev, S. Yu.; Nylandsted Larsen, A.; Safronov, N. 📂 Article 📅 1990 🏛 American Institute of Physics 🌐 English ⚖ 711 KB

Electron - beam annealing of B-, P-, As-

✍ McMahon, R.A.; Ahmed, H. 📂 Article 📅 1982 🏛 The Institution of Electrical Engineers ⚖ 740 KB

Lateral spread of high energy P and B io

✍ V. Privitera; V. Raineri; E. Rimini 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 252 KB