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The beam properties of high-power InGaAs/AlGaAs quantum well lasers

โœ Scribed by Xiang Wu; Zukang Lu; You Wang; Yoshihiro Takiguchi; Hirofumi Kan

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
230 KB
Volume
35
Category
Article
ISSN
0030-3992

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โœฆ Synopsis

The vertical beam quality factor of the fundamental TE propagating mode for InGaAs/AlGaAs SCH DQW lasers emitting at 940 nm is investigated by using the transfer matrix method and the non-paraxial vectorial moment theory for non-paraxial beams. An experimental approach is given for the measurement of the equivalent vertical beam quality factor of an InGaAs/AlGaAs SCH DQW laser. It has been shown that the vertical beam quality factor M 2

x is always larger than unity, whether the thickness of the active region of LDs is much smaller than the emission wavelength or not.

๐Ÿ“œ SIMILAR VOLUMES

Theory of carrier gain dynamics in InGaA
Theory of carrier gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers
โœ G.D. Sanders; C.J. Stanton; C.-K. Sun; B. Golubovic; J.G. Fujimoto ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 324 KB

Calculations of the femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers are presented and compared to experiments which use a novel multiple-wavelength pump probe technique. We develop a detailed theoretical model for the gain dynamics in a quantum well laser d