The advantages of p-type and design methodologies for Si1−xGex far-infrared (terahertz) quantum well infrared photodetectors (QWIPs)

Arguments for p-type Si 1 − xG

Arguments for p-type Si 1 − xGe x/Si quantum well photodetectors for the far- and very-far (terahertz)-infrared

✍ M.A Gadir; P Harrison; R.A Soref 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 366 KB

An analysis, by a carrier scattering approach, of the thermionic emission contribution to the dark current is carried out in conventional bound-to-continuum quantum well infrared photodetectors (QWIPs). It is found that the thermionic emission increases with increasing temperature or when extending