Temperature-dependent terahertz radiatio
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G. Molis; R. Adomavičius; A. Krotkus
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Article
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2008
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Elsevier Science
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English
⚖ 143 KB
Temperature-dependent increase of the terahertz (THz) electric field emitted from the surfaces of optically pumped narrow-gap semiconductors InAs, InSb, and Cd x Hg 1Àx Te is presented. In the case of Cd 0.2 Hg 0.8 Te increase up to 15-17 times has been observed, when cooling the sample from the roo