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Terahertz radiation from narrow-gap semiconductors photoexcited by femtosecond laser pulses

✍ Scribed by R. Adomavičius; A. Urbanowicz; G. Molis; A. Krotkus


Book ID
108207441
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
125 KB
Volume
81
Category
Article
ISSN
0167-9317

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Temperature-dependent increase of the terahertz (THz) electric field emitted from the surfaces of optically pumped narrow-gap semiconductors InAs, InSb, and Cd x Hg 1Àx Te is presented. In the case of Cd 0.2 Hg 0.8 Te increase up to 15-17 times has been observed, when cooling the sample from the roo