Temperature-dependent increase of the terahertz (THz) electric field emitted from the surfaces of optically pumped narrow-gap semiconductors InAs, InSb, and Cd x Hg 1Àx Te is presented. In the case of Cd 0.2 Hg 0.8 Te increase up to 15-17 times has been observed, when cooling the sample from the roo
✦ LIBER ✦
Terahertz pulse emission from semiconductor surfaces illuminated by femtosecond Yb:KGW laser pulses
✍ Scribed by A. Bičiūnas; V. Pačebutas; A. Krotkus
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 221 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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We report the use of femtosecond laser photoionization of sputtered neutral molecules to enhance the sensitivity of detection and to improve the prospects for molecule-specific imaging experiments. Results are presented for patterned metal oxides, polycyclic aromatic hydrocarbons and several amino a