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Terahertz emission from femtosecond laser illuminated (112) surfaces of InSb

✍ Scribed by Malevich, V. L.; Krotkus, A.; Bičiūnas, A.; Pačebutas, V.


Book ID
121011915
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
620 KB
Volume
104
Category
Article
ISSN
0021-8979

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Temperature-dependent increase of the terahertz (THz) electric field emitted from the surfaces of optically pumped narrow-gap semiconductors InAs, InSb, and Cd x Hg 1Àx Te is presented. In the case of Cd 0.2 Hg 0.8 Te increase up to 15-17 times has been observed, when cooling the sample from the roo