Templating of polycrystalline ZnO with DNA and its performance in field-effect transistors

✍ Scribed by Hoffmann, Rudolf C. ;Atanasova, Petia ;Dilfer, Stefan ;Bill, Joachim ;Schneider, Jörg J.

• Book ID: 105366525
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 546 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201127064

✦ Synopsis

Abstract

Field effect transistors (FET) with bottom gate/bottom contact arrangement are constructed using composites of deoxyribonucleic acid (DNA) and nanoparticulate zinc oxide as semiconductor. Polycrystalline ZnO, is tethered onto double stranded DNA by means of a chemical bath deposition (CBD) technique at about 60 °C. In the FET device the DNA/ZnO composite wires bridge the source and drain geometry in a stochastic arrangement. The carrier charge mobility was extracted as 5.52 × 10^−5^ cm^2^/V s; I~on/off~ ∼ 52.500 as well as V~th~ + 9.07 V. The device performance was obtained from as deposited material without further annealing. The presence of the DNA structure directing template seems to be beneficial for the FET performance.

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