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Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors

✍ Scribed by Park, Won Il; Kim, Jin Suk; Yi, Gyu-Chul; Bae, M. H.; Lee, H.-J.

Book ID: 120185662
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 333 KB
Volume: 85
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1821648

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## Abstract We report the first microwave performance of single crystalline ZnO/ZnMgO heterostructure field‐effect transistors (HFETs). The structure consisted of a 15‐nm‐thick ZnO channel layer was grown by molecular beam epitaxy (MBE) on an __a__‐sapphire substrate. Two‐finger type HFETs with 1 o