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Temperature programmed desorption study of (NH4)2Sx treated GaAs surfaces

โœ Scribed by Takashi Nomura; Taku Yamagata; Hidenaga Warashina; Kenji Ishikawa; Minoru Hagino

Book ID
103617076
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
396 KB
Volume
65-66
Category
Article
ISSN
0169-4332

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## Angle -dependent high-resolution XPS spectra of S 2p, In 3d,,, and P 2p have been measured on the InP(001) sample etched chemically, treated with (NH4),Sx at room temperature (RT), exposed to air at RT and annealed at 400ยฐC in a vacuum. Three kinds (%I, S-I1 and S-111) of chemical states of sul