✦ LIBER ✦

Temperature-mediated phase selection during growth of GaN on (111)A and (1Ì1Ì1Ì)B GaAs substrates

✍ Scribed by Yang, J. W.; Kuznia, J. N.; Chen, Q. C.; Khan, M. Asif; George, T.; De Graef, M.; Mahajan, S.

Book ID: 120434813
Publisher: American Institute of Physics
Year: 1995
Tongue: English
Weight: 1007 KB
Volume: 67
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.115374

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

GaxIn1−xP Liquid phase epitaxial growth

GaxIn1−xP Liquid phase epitaxial growth on (001), (111)a, and (111)b GaAs substrates

✍ Hiromitsu Asai; Kunishige Oe 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 723 KB

Influence of MBE Growth Temperature on t

Influence of MBE Growth Temperature on the Properties of Cubic GaN Grown Directly on GaAs Substrates

✍ Georgakilas, A. ;Androulidaki, M. ;Tsagaraki, K. ;Amimer, K. ;Constantinidis, G. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 183 KB 👁 2 views

A. Georgakilas 1 ) (a, b), M. Androulidaki (a), K. Tsagaraki (a), K. Amimer (a), G. Constantinidis (a), N.T. Pelekanos (c), M. Calamiotou (d), Zs. Czigany (e), and B. Pecz (e)

Growth dynamics of GaAs, AlAs and (Al, G

Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy

✍ B. A. Joyce; J. H. Neave; M. R. Fahy; K. Sato; D. M. Holmes; J. G. Belk; J. L. S 📂 Article 📅 1996 🏛 Springer US 🌐 English ⚖ 816 KB

The growth dynamics of GaAs, AlAs and (AI, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs (11 0) and (1 11)Asubstrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (0 0

Temperature-mediated phase selection during growth of GaN on (111)A and (1Ì1Ì1Ì)B GaAs substrates

Temperature-mediated phase selection during growth of GaN on (111)A and (1Ì1Ì1Ì)B GaAs substrates