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Temperature influence on optical charging of self-assembled InAs/GaAs semiconductor quantum dots

✍ Scribed by Karlsson, K. F.; Moskalenko, E. S.; Holtz, P. O.; Monemar, B.; Schoenfeld, W. V.; Garcia, J. M.; Petroff, P. M.

Book ID
121725986
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
410 KB
Volume
78
Category
Article
ISSN
0003-6951

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Optical properties of self-assembled InA
Optical properties of self-assembled InAs quantum dots on high-index GaAs substrates
✍ P.P. GonzΓ‘lez-Borrero; E. Marega Jr; D.I. Lubyshev; E. Petitprez; P. Basmaji πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 136 KB

In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present