Temperature-induced valence change of YbAl2 studied by XPS and BIS
β Scribed by S.-J. Oh; J.W. Allen; M.S. Torikachvili; M.B. Maple
- Book ID
- 113312606
- Publisher
- Elsevier Science
- Year
- 1985
- Tongue
- English
- Weight
- 282 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0304-8853
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π SIMILAR VOLUMES
XPS and x-ray-induced AES have been used to study the reaction layers formed on silicon powder samples heated in ultra-high purity nitrogen at temperatures between 1100 and 1200 "C. An equation was derived to calculate the average surface reaction layer thicknesses from the silicon AES spectra. The
Core-level and valence-band electronic structures of Bi2Sr2Cal-xYxCu2Oy (x=0,O.4, and 0.7) have been studied by X-ray and UV photoemlsslon spectroscopy. A Fermi edge is observed for x=0.4 as well as for x=0. It is found that the density of states at the Fermi level and the intensity of a 1.2-eV peak