✦ LIBER ✦

Temperature-dependent thermal conductivity of porous silicon

✍ Scribed by Gesele, G; Linsmeier, J; Drach, V; Fricke, J; Arens-Fischer, R

Book ID: 118008856
Publisher: Institute of Physics
Year: 1997
Tongue: English
Weight: 143 KB
Volume: 30
Category: Article
ISSN: 0022-3727
DOI: 10.1088/0022-3727/30/21/001

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Temperature and structure size dependenc

Temperature and structure size dependence of the thermal conductivity of porous silicon

✍ de Boor, J.; Kim, D. S.; Ao, X.; Hagen, D.; Cojocaru, A.; Föll, H.; Schmidt, V. 📂 Article 📅 2011 🏛 EDP Sciences 🌐 English ⚖ 551 KB

Electrical conduction in porous silicon:

Electrical conduction in porous silicon: temperature dependence

✍ Mikrajuddin; F.G Shi; K Okuyama 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 585 KB

Debye Temperature Dependent Lattice Ther

Debye Temperature Dependent Lattice Thermal Conductivity of Silicon

✍ A. H. Awad 📂 Article 📅 1999 🏛 Springer Netherlands 🌐 English ⚖ 307 KB

Temperature-Dependent Thermal Conductivi

Temperature-Dependent Thermal Conductivity of Undoped Polycrystalline Silicon Layers

✍ S. Uma; A. D. McConnell; M. Asheghi; K. Kurabayashi; K. E. Goodson 📂 Article 📅 2001 🏛 Springer 🌐 English ⚖ 260 KB

Temperature dependence of thermally-carb

Temperature dependence of thermally-carbonized porous silicon humidity sensor

✍ Björkqvist, M. ;Paski, J. ;Salonen, J. ;Lehto, V.-P. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 103 KB

## Abstract Thermal carbonization of porous silicon (PS) at 820 °C under acetylene atmosphere is an appropriate method for humidity sensing purposes. It produces stable and hydrophilic surface still maintaining originally large specific surface area of PS. We report the temperature dependence of va

Temperature dependence of gas conductanc

Temperature dependence of gas conductance through porous silicon carbide plugs

📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 141 KB

12 1526. Ionization growth in carbon dioxide. (G B) Current growth measurements have been carried out in carbon dioxide for E[N (electric field/gas number density) values between 84 × 10 -t7 and 166 × 10 -)~ V cm 2 and N values between 4.5 x 10 ~ and 220 × 10 z7 cm-L Ionization and attachment coeffi